| @Ic (test) (A) | 1.0 |
| @VCE (V) | 5.0 |
| Case | TO128 |
| Forward Current Transfer Ratio (hFE), MIN, Min hFE | 10 |
| Ic Max. (A) | 4.0 |
| Icbo Max. @Vcb Max. (A) | 1.0m |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 60 |
| Maximum Collector Current |Ic max| | 4 A |
| Maximum Collector Power Dissipation (Pc) | 60 W |
| Maximum Collector-Base Voltage |Vcb| | 65 V |
| Maximum Collector-Emitter Voltage |Vce| | 35 V |
| Maximum Emitter-Base Voltage |Veb| | 4 V |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| SKU | 766540 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 150M |
| Transition Frequency (ft): | 75 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 65 |
| Vbr CEO | 35 |