Attributes

Key Value
Built in Bias Resistor .10 kOhm
Built in Bias Resistor .10 kOhm
CaseSOT563F
Collector Capacitance (.3 pF
Forward Current Transfe.50
ManufacturerToshiba
Max. Operating Junction.150 ?C
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.1 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.50 V
Maximum Emitter-Base Vo.10 V
PolarityPre-Biased-NPN*PNP
SKU361861
SMD Transistor CodeVB
Transition Frequency (f.200 MHz
TypeTransistor Silicon Pre-.
Typical Resistor Ratio .1
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