Toshiba Semiconductor and Storage 2SA1837,HFEMBJF(J

mpn2SA1837,HFEMBJF(J
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Collector (Ic.	1A
Current - Collector Cut.	1?A (ICBO)
DC Current Gain (hFE) (.	100 @ 100mA, 5V
Frequency - Transition	70MHz
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Bulk
Package / Case	TO-220-3 Full Pack
Part Status	Obsolete
Power - Max	2W
Series	-
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ .	1.5V @ 50mA, 500mA
Voltage - Collector Emi.	230V