Toshiba Semiconductor and Storage 2SK3132(Q)

mpn2SK3132(Q)
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	2SK3132
Category	Discrete Semiconductor .
Current - Continuous Dr.	50A (Ta)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	280 nC @ 10 V
Input Capacitance (Ciss.	11000 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package / Case	TO-3PL
Part Status	Obsolete
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	95mOhm @ 25A, 10V
Supplier Device Package	TO-3P(L)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.4V @ 1mA