prev
Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
Description:
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
IGBT Type, Series, Switching Energy, Td (on/off) @ 25?C, Test Condition-
Input TypeStandard
MfrToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Power - Max230 W
Product StatusActive
Supplier Device PackageTO-3P(N)
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)600 V