Toshiba Semiconductor and Storage SSM3J374R,LF

mpnSSM3J374R,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3J374
Category	Discrete Semiconductor .
Current - Continuous Dr.	4A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	5.9 nC @ 10 V
Input Capacitance (Ciss.	280 pF @ 15 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	71mOhm @ 3A, 10V
Series	U-MOSVI
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2V @ 100?A