Toshiba Semiconductor and Storage SSM3K122TU,LF

mpnSSM3K122TU,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3K122
Category	Discrete Semiconductor .
Current - Continuous Dr.	2A (Ta)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.5V, 4V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	3.4 nC @ 4 V
Input Capacitance (Ciss.	195 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	3-SMD, Flat Leads
Part Status	Active
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	123mOhm @ 1A, 4V
Series	-
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?10V
Vgs(th) (Max) @ Id	1V @ 1mA