Toshiba Semiconductor and Storage SSM3K56CT,L3F

mpnSSM3K56CT,L3F
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3K56
Category	Discrete Semiconductor .
Current - Continuous Dr.	800mA (Ta)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.5V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	1 nC @ 4.5 V
Input Capacitance (Ciss.	55 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TA)
Package	Tape & Reel (TR)
Package / Case	SC-101, SOT-883
Power Dissipation (Max)	500mW (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	235mOhm @ 800mA, 4.5V
Series	U-MOSVII-H
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	1V @ 1mA