Toshiba Semiconductor and Storage SSM6G18NU,LF

mpnSSM6G18NU,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM6G18
Category	Discrete Semiconductor .
Current - Continuous Dr.	2A (Ta)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.5V, 4.5V
FET Feature	Schottky Diode (Isolate.
FET Type	P-Channel
Gate Charge (Qg) (Max) .	4.6 nC @ 4.5 V
Input Capacitance (Ciss.	270 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	6-WDFN Exposed Pad
Power Dissipation (Max)	1W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	112mOhm @ 1A, 4.5V
Series	-
Supplier Device Package	6-?DFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	1V @ 1mA