Toshiba Semiconductor and Storage TJ9A10M3-S4Q

mpnTJ9A10M3-S4Q
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TJ9A10
Category	Discrete Semiconductor .
Current - Continuous Dr.	9A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	47 nC @ 10 V
Input Capacitance (Ciss.	2900 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C
Package	Tube
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	19W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 10V
Series	U-MOSVI
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 1mA