Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M)

mpnTK12A60D(STA4,Q,M)
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK12A60
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Ta)
Description	MOSFET N-CH 600V 12A TO.
Detailed Description	N-Channel 600 V 12A (Ta.
Digi-Key Part Number	TK12A60D(STA4QM)-ND
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	38 nC @ 10 V
Input Capacitance (Ciss.	1800 pF @ 25 V
Manufacturer	Toshiba Semiconductor a.
Manufacturer Product Nu.	TK12A60D(STA4,Q,M)
Manufacturer Standard L.	20 Weeks
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	550mOhm @ 6A, 10V
Series	?-MOSVII
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 1mA