Toshiba Semiconductor and Storage TK12V60W,LVQ

mpnTK12V60W,LVQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK12V60
Category	Discrete Semiconductor .
Current - Continuous Dr.	11.5A (Ta)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	Super Junction
FET Type	N-Channel
Gate Charge (Qg) (Max) .	25 nC @ 10 V
Input Capacitance (Ciss.	890 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	4-VSFN Exposed Pad
Power Dissipation (Max)	104W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
Series	DTMOSIV
Supplier Device Package	4-DFN-EP (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.7V @ 600?A