Toshiba Semiconductor and Storage TK19A50W,S5X

mpnTK19A50W,S5X
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	18.5A (Ta)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	38 nC @ 10 V
Input Capacitance (Ciss.	1350 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C
Package	Tube
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	190mOhm @ 7.9A, 10V
Series	DTMOSIV
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.7V @ 790?A