Toshiba Semiconductor and Storage TK39N60X,S1F

mpnTK39N60X,S1F
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK39N60
Category	Discrete Semiconductor .
Current - Continuous Dr.	38.8A (Ta)
Description	MOSFET N-CH 600V 38.8A .
Detailed Description	N-Channel 600 V 38.8A (.
Digi-Key Part Number	TK39N60XS1F-ND
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	85 nC @ 10 V
Input Capacitance (Ciss.	4100 pF @ 300 V
Manufacturer	Toshiba Semiconductor a.
Manufacturer Product Nu.	TK39N60X,S1F
Manufacturer Standard L.	52 Weeks
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	270W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	65mOhm @ 12.5A, 10V
Series	DTMOSIV-H
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.5V @ 1.9mA