| Base Product Number | TPC6011 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 6A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Operating Temperature | 150?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) | 700mW (Ta) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 10V |
| Series | U-MOSIV |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |