Toshiba Semiconductor and Storage TPC8A06-H(TE12LQM)

mpnTPC8A06-H(TE12LQM)
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPC8A06
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) .	19 nC @ 10 V
Input Capacitance (Ciss.	1800 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	-
Package	Tape & Reel (TR)
Package / Case	8-SOIC (0.173", 4.40mm .
Part Status	Obsolete
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	10.1mOhm @ 6A, 10V
Series	-
Supplier Device Package	8-SOP (5.5x6.0)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.3V @ 1mA