Toshiba Semiconductor and Storage TPH12008NH,L1Q

mpnTPH12008NH,L1Q
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPH12008
Category	Discrete Semiconductor .
Current - Continuous Dr.	24A (Tc)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	22 nC @ 10 V
Input Capacitance (Ciss.	1900 pF @ 40 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Part Status	Active
Power Dissipation (Max)	1.6W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs	12.3mOhm @ 12A, 10V
Series	U-MOSVIII-H
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 300?A