Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.7A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .4 nC @ 4.5 V
Input Capacitance (Ciss.155 pF @ 15 V
MfrUMW
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)900mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 1.7A, 10V
SeriesUMW
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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