| @Ic (A) | 50m |
| @VCE (test) (V) | .50 |
| C(ob) (F) | 3.0p |
| Case | TO18 |
| Collector Capacitance (Cc) | 4 pF |
| Derate (Amb) (W/?C) | 800u |
| Forward Current Transfer Ratio (hFE), MIN | 50 |
| hfe | 20 |
| Ic Max. (A) | 100m |
| Icbo Max. @Vcb Max. (A) | 5.0u |
| Manufacturer | USA Make |
| Max. Operating Junction Temperature (Tj) | 100 ?C |
| Max. PD (W) | 60m |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.06 W |
| Maximum Collector-Base Voltage |Vcb| | 15 V |
| Maximum Collector-Emitter Voltage |Vce| | 10 V |
| Maximum Emitter-Base Voltage |Veb| | 2 V |
| Oper. Temp (?C) Max. | 100 |
| Pinout Equivalence Number | 3-12 |
| Polarity | PNP |
| SKU | 116292 |
| Surface Mounted Yes/No | NO |
| Transition Frequency (ft): | 175 MHz |
| Type | Transistor Germanium PNP |
| Vbr CBO | 15 |
| Vbr CEO | 10 |