| @Ic (A) | 10m |
| @VCE (test) (V) | 1.0 |
| C(ob) (F) | 4.0p |
| Case | TO18 |
| Collector Capacitance (Cc) | 4 pF |
| Derate (Amb) (W/?C) | 6.7k |
| Forward Current Transfer Ratio (hFE), MIN, hfe, Vbr CBO | 20 |
| Ic Max. (A) | 220m |
| Icbo Max. @Vcb Max. (A) | 500n |
| Manufacturer | USA Make |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W), Trans. Freq (Hz) Min. | 300m |
| Maximum Collector Current |Ic max| | 0.2 A |
| Maximum Collector Power Dissipation (Pc) | 0.3 W |
| Maximum Collector-Base Voltage |Vcb| | 20 V |
| Maximum Collector-Emitter Voltage |Vce| | 10 V |
| Maximum Emitter-Base Voltage |Veb| | 3 V |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | 3-12 |
| Polarity | NPN |
| SKU | 770569 |
| Surface Mounted Yes/No | NO |
| Transition Frequency (ft): | 300 MHz |
| Type | Transistor Silicon NPN |
| Vbr CEO | 10 |