Vishay General Semiconductor - Diodes Division VS-3C16ET07T-M3

mpnVS-3C16ET07T-M3
brandname: Vishay General Semiconductor - Diodes Division
manufacturername: Vishay General Semiconductor - Diodes Division

Attributes

Key	Value
Capacitance @ Vr, F	700pF @ 1V, 1MHz
Category	Discrete Semiconductor .
Current - Average Recti.	16A
Current - Reverse Leaka.	85 ?A @ 650 V
Diode Type	Silicon Carbide Schottky
Mfr	Vishay General Semicond.
Mounting Type	Through Hole
Operating Temperature -.	-55?C ~ 175?C
Package	Tube
Package / Case	TO-220-2
Product Status	Active
Reverse Recovery Time (.	0 ns
Series	-
Speed	No Recovery Time > 500m.
Supplier Device Package	TO-220AC
Voltage - DC Reverse (V.	650 V
Voltage - Forward (Vf) .	1.5 V @ 16 A