Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.69 nC @ 10 V
Drive Voltage (Max Rds .77mOhm @ 17A, 10V
FET Feature150W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .1300 pF @ 25 V
MfrVishay Siliconix
Mounting TypeTO-220-5
Operating TemperatureThrough Hole
PackageObsolete
Package / Case100 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs4V @ 250?A
SeriesTube
Supplier Device PackageTO-220-5
Technology28A (Tc)
Vgs (Max)Current Sensing
Vgs(th) (Max) @ Id?20V
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