Attributes

Key Value
Base Product NumberIRF510
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.6A (Tc)
DescriptionMOSFET N-CH 100V 5.6A T.
Detailed DescriptionN-Channel 100 V 5.6A (T.
Digi-Key Part NumberIRF510L-ND
Drain to Source Voltage.100 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .8.3 nC @ 10 V
Input Capacitance (Ciss.180 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRF510L
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)-
Product StatusObsolete
Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V
Series-
Supplier Device PackageTO-262-3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250?A
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