Attributes

Key Value
Base Product NumberIRF630
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .43 nC @ 10 V
Input Capacitance (Ciss.800 pF @ 25 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3W (Ta), 74W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
Series-
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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