IRF9640PBF-VISHAY

B011NAHC7Y

VISHAY SILICONIX IRF9640PBF P CHANNEL MOSFET, -200V, -11A, TO-220AB (1 piece)

VISHAY SILICONIX IRF9640PBF P CHANNEL MOSFET, -200V, -11A, TO-220AB (1 piece)zoom

Attributes

Key Value
Alternate Part No.844-IRF9640PBF
Base Product NumberIRF9640
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
Channel TypeP
Circuit TypeP-Channel
ConfigurationSingle
Current - Continuous Dr.11A (Tc)
device functionMOSFET
device package typeto-220
Dimensions10.51 x 4.65 x 15.49 mm
Drain Current-11 A
Drain Current Id(rms)11 A
Drain Source Voltage Vds200 VDC
Drain to Source On Resi.0.5 Ohms
Drain to Source Voltage-200 V
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
Fall Time38 ns
Fall Time tf38 ns
Family SeriesVishay Transistors, TO-.
FET Feature-
FET TypeP-Channel
Forward Transconductance4.1 S
Forward Voltage, Diode-5 V
Gate Charge (Qg) (Max) .44 nC @ 10 V
Gate Leakage Current0.1 ?A
Gate Source Voltage Vgss20 VDC
Gate to Source Voltage+/-20 V
Gross Weight0 lbs
Height0.61" (15.49mm)
Id - Continuous Drain C.11 A
Input Capacitance1200 pF @ -25 V
Input Capacitance (Ciss.1200 pF @ 25 V
Item NumberIRF9640PBF
item per pack1
Length0.413 in
ManufacturerVishay
Manufacturer Part No.IRF9640PBF
Manufacturer Part NumberIRF9640PBF
Maximum Operating Tempe.+150 ?C, + 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C, -55 ?C
Mounting StyleThrough Hole
Mounting TypeThrough Hole
Net Weight0 lbs
Number of Elements per .1
Number of Pins3
Operating Temperature-55?C ~ 150?C (TJ)
package50 PER TUBE
PackageTO-220AB, Tube
Package / CaseTO-220-3
Package TypeTO-220AB
Package/CaseTO-220-3
PackagingTube
Pd - Power Dissipation125 W
PolarizationP-Channel
Power Dissipation125 W
Power Dissipation (Max)125W (Tc)
Product CategoryMOSFET
Product HeaderHexfet? Power MOSFET
Product Seriesto-220
Product StatusActive
Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
Rds On - Drain-Source R.500 mOhms
rDS(on)500 mOhm
Rise Time43 ns
Rise Time tr43 ns
RoHSYes
SeriesIRF Series, -, IRF/SIHF.
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Temperature Operating R.-55 to +150 ?C
Total Gate Charge44 nC
Transistor PolarityP-Channel
Trr250 ns
Turn Off Delay Time39 ns
Turn On Delay Time14 ns
Typ. Vgs(th)3 VDC
Typical Gate Charge @ V.Maximum of 44 nC @ -10 V
Typical Turn-Off Delay .39 ns
Vds - Drain-Source Brea.- 200 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id4V @ 250?A
Voltage, Breakdown, Dra.-200 V
Width0 in

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomNewark63J74360.77812072VISHAY0.778 @ 1
Future Electronics43083420.954110193Vishay0.954 @ 1
thumbzoomGalcoIRF9640PBF-VISH1.01100099Vishay1.01 @ 1000
thumbzoomTMEIRF9640PBF1.091979VISHAY1.09 @ 1
thumbzoomRadwellIRF9640PBF1.2196VISHAY1.2 @ 1
HotendaH18104301.5411590Vishay/Siliconix1.54 @ 1
thumbzoomTedss20280191031.62799VISHAY1.62 @ 7
RS Delivers178-08172.0112199Vishay2.0112 @ 1
us.rs-online.com700788772.441300Vishay PCS2.44 @ 1
Digi-Key8119392.56818194Vishay Siliconix2.568 @ 1
thumbzoomswatee.comIRF9640PBF3.3311124Vishay3.33 @ 1
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