Vishay Siliconix IRFBF30SPBF

mpnIRFBF30SPBF
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.6A (Tc)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	78 nC @ 10 V
Input Capacitance (Ciss.	1200 pF @ 25 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	3.7Ohm @ 2.2A, 10V
Series	-
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A