Attributes

Key Value
Base Product NumberIRFD010
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.7A (Tc)
DescriptionMOSFET N-CH 50V 1.7A 4D.
Detailed DescriptionN-Channel 50 V 1.7A (Tc.
Digi-Key Part NumberIRFD010PBF-ND
Drain to Source Voltage.50 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 10 V
Input Capacitance (Ciss.250 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRFD010PBF
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case4-DIP (0.300", 7.62mm)
Power Dissipation (Max)1W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs200mOhm @ 860mA, 10V
Series-
Supplier Device Package4-HVMDIP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev