Attributes

Key Value
Base Product NumberIRFP22
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .150 nC @ 10 V
Input Capacitance (Ciss.3570 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)370W (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 13A, 10V
Series-
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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