Attributes

Key Value
Base Product NumberIRFR014
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7.7A (Tc)
Drain to Source Voltage.60 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .11 nC @ 10 V
Input Capacitance (Ciss.300 pF @ 25 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
Series-
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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