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Vishay Siliconix IRL630PBF-BE3
manufacturer:
Description:
N-Channel 200 V 9A (Tc) 74W (Tc) Through Hole TO-220AB

Attributes

Key Value
Base Product NumberIRL630
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C9A (Tc)
Drain to Source Voltage (Vdss)200 V
FET Feature, Series-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)74W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id2V @ 250?A