mpn
SI2301CDS-T1-BE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
2.3A (Ta), 3.1A (Tc)
Drain to Source Voltage.
20 V
Drive Voltage (Max Rds .
2.5V, 4.5V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) .
10 nC @ 4.5 V
Input Capacitance (Ciss.
405 pF @ 10 V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)
860mW (Ta), 1.6W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
112mOhm @ 2.8A, 4.5V
Series
-
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?8V
Vgs(th) (Max) @ Id
1V @ 250?A