Attributes

Key Value
Base Product NumberSI2309
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.6A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .4.1nC @ 4.5V
Input Capacitance (Ciss.210pF @ 30V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs345mOhm @ 1.25A, 10V
SeriesTrenchFET?
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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