SILICONIX (VISHAY) SI3430DV-T1-E3

B07BZGS28M

SILICONIX (VISHAY) SI3430DV-T1-E3 Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6 - 3000 item(s)

SILICONIX (VISHAY) SI3430DV-T1-E3 Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6 - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberSI3430
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.8A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.6 nC @ 10 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)1.14W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs170mOhm @ 2.4A, 10V
Series-
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A (Min)

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Freelance ElectronicsSI3430DV-T1-E30.313113000Vishay0.3131 @ 3000
HotendaH18068660.514713212Vishay/Siliconix0.5147 @ 3000
thumbzoomNewark65K19230.56630003000VISHAY0.566 @ 3000
Digi-Key17647020.683113000Vishay Siliconix0.6831 @ 3000
Future Electronics68857190.7213000Vishay0.72 @ 3000
thumbzoomComponent Electronics3430DV-T1-E3-VIS2.013000Vishay2.0 @ 3000
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