Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Ta), 8A (Tc)
Drain to Source Voltage.12 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .65 nC @ 8 V
Input Capacitance (Ciss.2010 pF @ 6 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)2W (Ta), 4.2W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs22mOhm @ 8.1A, 4.5V
Series-
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
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