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Vishay Siliconix SI4196DY-T1-GE3
Vishay Siliconixzoom
manufacturer:

Attributes

Key ^Value
Current - Continuous Drain (Id) @ 25?C8A (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds830 pF @ 10 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / Case8-SOIC (0.154", 3.90mm Width)
Part StatusActive
Power Dissipation (Max)2W (Ta), 4.6W (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 8A, 4.5V
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A