B09T698F4P

SI4778DY-T1-E3, Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R (100 Items)

Attributes

Key Value
Base Product NumberSI4778
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .18 nC @ 10 V
Input Capacitance (Ciss.680 pF @ 13 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.4W (Ta), 5W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
SeriesTrenchFET?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.2V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-KeySI4778DY-T1-E3-ND0.27552500100Vishay Siliconix0.2755 @ 2500
AvnetSI4778DY-T1-E30.298272500100Vishay Siliconix0.29827 @ 2500
RutronikTMOSP88030.3372500100Vishay Siliconix0.337 @ 2500
Mouser781-SI4778DY-E30.44712425Vishay Siliconix0.447 @ 100
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