Attributes

Key Value
Base Product NumberSI5485
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .42 nC @ 8 V
Input Capacitance (Ciss.1100 pF @ 10 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? ChipFET? Sing.
Part StatusObsolete
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 5.9A, 4.5V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? ChipFET? Sing.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.5V @ 250?A
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