Attributes

Key Value
Base Product NumberSIDR578
CategoryDiscrete Semiconductor .
Current - Continuous Dr.17.4A (Ta), 78A (Tc)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .49 nC @ 10 V
Input Capacitance (Ciss.2540 pF @ 75 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)7.5W (Ta), 150W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs8.8mOhm @ 20A, 10V
SeriesTrenchFET? Gen V
Supplier Device PackagePowerPAK? SO-8DC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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