Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 26A (Tc)
Drain to Source Voltage. 500V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 86nC @ 10V
Input Capacitance (Ciss. 1980pF @ 100V
Lead Free Status / RoHS. Lead free / RoHS Compl.
Manufacturer Vishay Siliconix
Manufacturer Part Number SIHG25N50E-GE3
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55?C ~ 150?C (TJ)
Package / Case TO-247-3
Packaging Tube
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Series -
Standard Package 500
Supplier Device Package TO-247AC
Technology MOSFET (Metal Oxide)
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