Vishay Siliconix SIHG25N50E-GE3

mpnSIHG25N50E-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SIHG25
Category	Discrete Semiconductor .
Current - Continuous Dr.	26A (Tc)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	86 nC @ 10 V
Input Capacitance (Ciss.	1980 pF @ 100 V
Mfr	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Part Status	Active
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	145mOhm @ 12A, 10V
Series	-
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A