Vishay Siliconix SIHK065N60E-T1-GE3

mpnSIHK065N60E-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	34A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	72 nC @ 10 V
Input Capacitance (Ciss.	2946 pF @ 100 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerBSFN
Power Dissipation (Max)	192W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	68mOhm @ 15A, 10V
Series	E
Supplier Device Package	PowerPAK?10 x 12
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5V @ 250?A