Vishay Siliconix SIR5802DP-T1-RE3

mpnSIR5802DP-T1-RE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	33.6A (Ta), 137.5A (Tc)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	7.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	60 nC @ 10 V
Input Capacitance (Ciss.	3020 pF @ 40 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SO-8
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	2.9mOhm @ 20A, 10V
Series	TrenchFET? Gen V
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A