SIS322DNT-T1-GE3-VISHAY_IT

B011N9Q89S

VISHAY SILICONIX SIS322DNT-T1-GE3 MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8 (1 piece)

VISHAY SILICONIX SIS322DNT-T1-GE3 MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8 (1 piece)zoom

Attributes

Key Value
Alternate Part No.78-SIS322DNT-T1-GE3
Base Product NumberSIS322
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
ConfigurationSingle
Current - Continuous Dr.38.3A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
Fall Time14 ns
FET Feature-
FET TypeN-Channel
Forward Transconductanc.54 S
Gate Charge (Qg) (Max) .21.5 nC @ 10 V
Id - Continuous Drain C.30 A
Input Capacitance (Ciss.1000 pF @ 15 V
ManufacturerVISHAY
Manufacturer Part No.SIS322DNT-T1-GE3
MfrVishay Siliconix
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8
Package/CasePowerPAK 1212-8
PackagingReel
Pd - Power Dissipation19.8 W
Power Dissipation (Max)3.2W (Ta), 19.8W (Tc)
Product CategoryMOSFET
Product StatusActive
Qg - Gate Charge6.9 nC
Rds On (Max) @ Id, Vgs7.5mOhm @ 10A, 10V
Rds On - Drain-Source R.7.5 mOhms
Rise Time20 ns
SeriesTrenchFET?, SISxxxDN
Supplier Device PackagePowerPAK? 1212-8
TechnologyMOSFET (Metal Oxide)
TradenameTrenchFET Gen IV
Transistor PolarityN-Channel
Type of transistorN-MOSFET
Typical Turn-Off Delay .30 ns
Vds - Drain-Source Brea.30 V
Vgs (Max)+20V, -16V
Vgs - Gate-Source Break.2.4 V
Vgs th - Gate-Source Th.2.4 V
Vgs(th) (Max) @ Id2.4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key39001960.2643000378Vishay Siliconix0.264 @ 3000
thumbzoomNewark68W70910.3333000300VISHAY0.333 @ 3000
TMESIS322DNT-T1-GE30.7781300VISHAY0.778 @ 1
thumbzoomswatee.comSIS322DNT-T1-GE31.3111956Vishay1.31 @ 1
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev