B011NE7R66

VISHAY SILICONIX SIS476DN-T1-GE3 MOSFET, N CHANNEL, 30V, 40A, POWERPAK 1212-8 (1 piece)

VISHAY SILICONIX SIS476DN-T1-GE3 MOSFET, N CHANNEL, 30V, 40A, POWERPAK 1212-8 (1 piece)zoom

Attributes

Key Value
Alternate Part No.78-SIS476DN-T1-GE3
Base Product NumberSIS476
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
ConfigurationSingle
Current - Continuous Dr.40A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .77 nC @ 10 V
Id - Continuous Drain C.40 A
Input Capacitance (Ciss.3595 pF @ 15 V
ManufacturerVISHAY
Manufacturer Part No.SIS476DN-T1-GE3
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8
Package/CasePowerPAK 1212-8
PackagingReel
Part # AliasesSIS476DN-GE3
Pd - Power Dissipation52 W
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Product CategoryMOSFET
Product StatusActive
Qg - Gate Charge22.5 nC
Rds On (Max) @ Id, Vgs2.5mOhm @ 15A, 10V
Rds On - Drain-Source R.2.5 mOhms
SeriesTrenchFET?, SISxxxDN
Supplier Device PackagePowerPAK? 1212-8
TechnologyMOSFET (Metal Oxide)
Transistor PolarityN-Channel
Type of transistorN-MOSFET
Vds - Drain-Source Brea.30 V
Vgs (Max)+20V, -16V
Vgs - Gate-Source Break.2.3 V
Vgs(th) (Max) @ Id2.3V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18093870.476127000Vishay/Siliconix0.476 @ 50
Future Electronics30217510.624300050Vishay0.624 @ 3000
TMESIS476DN-T1-GE30.708150VISHAY0.708 @ 50
thumbzoomNewark68W70930.728300050VISHAY0.728 @ 3000
RS Delivers180-73610.864150Vishay0.864 @ 50
Digi-Key31783771.3236150Vishay Siliconix1.3236 @ 50
thumbzoomswatee.comSIS476DN-T1-GE32.5111736Vishay2.51 @ 50
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