Vishay Siliconix SIS590DN-T1-GE3

mpnSIS590DN-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	2.7A (Ta), 4A (Tc), 2.3.
Drain to Source Voltage.	100V
FET Feature	Standard
FET Type	N and P-Channel
Gate Charge (Qg) (Max) .	-
Input Capacitance (Ciss.	-
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? 1212-8 Dual
Power - Max	2.5W (Ta), 17.9W (Tc), .
Product Status	Active
Rds On (Max) @ Id, Vgs	167mOhm @ 1.5A, 10V, 25.
Series	TrenchFET?
Supplier Device Package	PowerPAK? 1212-8 Dual
Vgs(th) (Max) @ Id	2.5V @ 250?A