Vishay Siliconix SISHA06DN-T1-GE3

mpnSISHA06DN-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	28.1A (Ta), 104A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	67 nC @ 10 V
Input Capacitance (Ciss.	3932 pF @ 15 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? 1212-8SH
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	3mOhm @ 10A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.4V @ 250?A