Attributes

Key Value
Base Product NumberSISS26
CategoryDiscrete Semiconductor .
Current - Continuous Dr.23.7A (Ta), 81.2A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .48 nC @ 10 V
Input Capacitance (Ciss.1980 pF @ 30 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8S
Power Dissipation (Max)4.8W (Ta), 57W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs4.3mOhm @ 15A, 10V
SeriesTrenchFET? Gen IV
Supplier Device PackagePowerPAK? 1212-8S
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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