Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.5A (Tc)
Drain to Source Voltage.30V
FET FeatureStandard
FET Type2 P-Channel (Dual)
Gate Charge (Qg) (Max) .11.1nC @ 10V
Input Capacitance (Ciss.-
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power - Max1.67W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs155mOhm @ 400mA, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device Package6-TSOP
Vgs(th) (Max) @ Id1.5V @ 250?A
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