| Base Product Number | SQJ858 |
| Case | PowerPAK? SO8 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 58A (Tc) |
| Description | MOSFET N-CH 40V 58A PPAK SO-8 |
| Detailed Description | N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK? SO-8 |
| Digi-Key Part Number | SQJ858AEP-T1_GE3TR-ND - Tape & Reel (TR) |
| Drain current | 33A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drain-source voltage | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate charge | 36nC |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Gate-source voltage, Vgs (Max) | ?20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 20 V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | VISHAY |
| Manufacturer Product Number | SQJ858AEP-T1_GE3 |
| Manufacturer Standard Lead Time | 42 Weeks |
| Manufacturer, Mfr | Vishay Siliconix |
| Mounting | SMD |
| Mounting Type | Surface Mount |
| On-state resistance | 6.3m? |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case, Supplier Device Package | PowerPAK? SO-8 |
| Polarisation | unipolar |
| Power dissipation | 48W |
| Power Dissipation (Max) | 48W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 14A, 10V |
| Series | Automotive, AEC-Q101, TrenchFET? |
| Technology | MOSFET (Metal Oxide) |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 2.5V @ 250?A |