Attributes

Key Value
Base Product NumberSQJB60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.60V
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .30nC @ 10V
Input Capacitance (Ciss.1600pF @ 25V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8 Dual
Part StatusActive
Power - Max48W
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackagePowerPAK? SO-8 Dual
Vgs(th) (Max) @ Id2.5V @ 250?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev